IndiumV3, Russie, Analysis, bibRecord, 000589

Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation

Identifieur interne : 000589 ( Russie/Analysis ); précédent : 000588; suivant : 000590

Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation

Auteurs : RBID : Pascal:03-0032915

Descripteurs français

Pascal (Inist)
- 7363K, 7867P, 6865C, Etude expérimentale, Gallium arséniure, Indium composé, Point quantique semiconducteur, Superréseau semiconducteur, Conductivité électrique, Photoluminescence, Effet Hall, Effet Shubnikov de Haas, Microscopie force atomique, Structure interface.

English descriptors

KwdEn :
- Atomic force microscopy, Electrical conductivity, Experimental study, Gallium arsenides, Hall effect, Indium compounds, Interface structure, Photoluminescence, Semiconductor quantum dots, Semiconductor superlattices, Shubnikov-de Haas effect.

Abstract

Temperature dependences of resistance at 0.7 K < T < 300 K, the Hall and Shubnikov-de Haas effects in magnetic fields of up to 40 T, photoluminescence (PL), and morphology of a heterointerface (using an atomic-force microscope) of short-period InAs/GaAs superlattices were investigated. The investigations were carried out for a region of subcritical and critical thickness Q = 2.7 monolayers (ML) of InAs. Upon exceeding the critical thickness, the self-organized growth of InAs quantum dots (QDs) set in. The formation of QD layers upon exceeding the critical thickness of InAs Q = 2.7 ML is accompanied by a transition of conductivity from metallic to hopping. It is found that at InAs layer thicknesses of Q = 0.33 ML and Q = 2.0 ML, the PL intensities and electron mobilities in the structures have clearly pronounced maxima. Anisotropy of conductivity, which depends on the thickness of the deposited InAs layers, was observed. © 2003 MAIK Nauka / Interperiodica .

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Le document en format XML

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<front><div type="abstract" xml:lang="en">Temperature dependences of resistance at 0.7 K < T < 300 K, the Hall and Shubnikov-de Haas effects in magnetic fields of up to 40 T, photoluminescence (PL), and morphology of a heterointerface (using an atomic-force microscope) of short-period InAs/GaAs superlattices were investigated. The investigations were carried out for a region of subcritical and critical thickness Q = 2.7 monolayers (ML) of InAs. Upon exceeding the critical thickness, the self-organized growth of InAs quantum dots (QDs) set in. The formation of QD layers upon exceeding the critical thickness of InAs Q = 2.7 ML is accompanied by a transition of conductivity from metallic to hopping. It is found that at InAs layer thicknesses of Q = 0.33 ML and Q = 2.0 ML, the PL intensities and electron mobilities in the structures have clearly pronounced maxima. Anisotropy of conductivity, which depends on the thickness of the deposited InAs layers, was observed. © 2003 MAIK  Nauka / Interperiodica .</div>
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Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation

Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri